PART |
Description |
Maker |
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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KDZ13V KDZ12V KDZ16V KDZ11V KDZ20V KDZ10V KDZ15V K |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION/ REFERENCE VOLTAGE) ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION, REFERENCE VOLTAGE) 20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor LED 5MM 563NM HI GRN WATER CLEAR surface mount silicon Zener diodes 硅表面贴装齐纳二极管
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
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DSEA16-06AC |
HiPerDynFRED Epitaxial Diode(正向电流16AB>HiPerDynFRED外延型二极管) HiPerDynFRED Epitaxial Diode(正向电流16A的HiPerDynFRED外延型二极管) 8 A, 600 V, SILICON, RECTIFIER DIODE
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IXYS Corporation IXYS, Corp.
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HSM123 HSM123-E |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Silicon Epitaxial Planar Diode for High Speed Switching
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Renesas Electronics Corporation
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1N4148 |
500mW 100 Volt Silicon Epitaxial Diode 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
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Micro Commercial Components, Corp. MCC[Micro Commercial Components]
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1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5 40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 0.125 A, SILICON, SIGNAL DIODE 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 1 A, 400 V, SILICON, SIGNAL DIODE, DO-4 1 A, 200 V, SILICON, SIGNAL DIODE, DO-4 0.8 A, SILICON, SIGNAL DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
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KDV269 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
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KEC Holdings KEC(Korea Electronics)
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KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
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KEC(Korea Electronics)
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KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
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KEC[KEC(Korea Electronics)]
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DSEE15-12CC |
HiPerDynFRED Epitaxial Diode(正向电流15A的HiPerDynFRED外延型二极管) 15 A, 1200 V, SILICON, RECTIFIER DIODE
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IXYS Corporation IXYS, Corp.
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DSEP40-03AS |
HiPerFRED Epitaxial Diode with soft recovery 40 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB
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IXYS, Corp.
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